Fabrication and characterization of a self-aligned fftm-processed ofet device for high-current applications

Name: Arya, Jitendra Krishna

Organization : Indian Institute of Technology (BHU). Electronics Engineering

Name: Baranwal, Richa

Organization : Indian Institute of Technology (BHU). Electronics Engineering

Name: Mishra, V. N.

Organization : Indian Institute of Technology (BHU). Electronics Engineering

Name: Verma, Shivam

Organization : Indian Institute of Technology (BHU). Electronics Engineering

keyword: Polymer semiconductors

LCSH: Organic field-effect transistors

LCSH: Thin film transistors -- Materials

LCSH: Flexible electronics -- Materials

LCSH: Semiconductors -- Electrical properties

Abstract: Organic field-effect transistors (OFETs) fabricated by solution-based methods are promising for low-cost and flexible electronics. In this work, we demonstrate a high-current OFET using a self-aligned floating-film transfer method (FFTM). A Poly{2,2'-[(2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo[3,4-c] pyrrole- 1,4-diyl)]dithiophene-5,5'-diyl-altthieno[ 3,2-b] thiophen-2,5-diyl} (PDBT-co-TT) polymer semiconductor is deposited onto an octadecyl trichlorosilane (OTS) treated Si/SiO2 substrate. The resulting device exhibits a maximum drain current of 439 microAmpere at Vds = –40 V and operates stably. The extracted electrical parameters (Vth = –6.25 V, musat approximately 0.15cm2/V.s, SS approximately 374mV/dec, Ion/Ioff approximately 10 to the power of 4) indicate efficient charge transport and a clean semiconductor/dielectric interface. These results suggest that self-aligned FFTM is a simple, low-cost process that yields uniform organic semiconductor films and enables high-performance OFETs.

King Mongkut's University of Technology North Bangkok. Central Library

Address: BANGKOK

Email: library@kmutnb.ac.th

Created: 2026

Modified: 2026-08-10

Issued: 2026-08-10

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BibliograpyCitation : In ECTI Association and Burapha University. Faculty of Engineering. 2026 23rd International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON 2026) (pp.245-249). Piscataway, NJ : IEEE

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