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Jutturit Thongporn. Effect of rear irradiance on series and shunt resistance of n-type PERT bifacial silicon module. (). King Mongkut's University of Technology North Bangkok. Central Library. : , 2022.
Effect of rear irradiance on series and shunt resistance of n-type PERT bifacial silicon module
Name: Sirirat Tonsue
Organization :
Rajamangala University of Technology. Faculty of Engineering
Email :
sirirat_to61@live.rmutl.ac.th
Name: Anon Namin
Organization :
RMUTL Chiang Rai. CES-RMUTL
Email :
anamin@rmutl.ac.th
Name: Jutturit Thongporn
Organization :
Rajamangala University of Technology. Faculty of Engineering
Email :
jutturit.t@gmail.com
keyword:
Photovoltaic modules
LCSH:
Solar energy
Abstract:
The purpose of this research is to determine the bifaciality parameter and to study the variation of series and shunt resistance by the single IV curve method, referring to the IEC TS 60904-1-2 2019 standard for the experiment. The results showed that bifaciality had an effect on the increase in power. Bifaciality ranged from 78.51% to 83.20%, with Pmax lower than Isc by 4.7%, but within the normal range of n-type PERT modules. Bifaciality increases the total absorbance used to produce energy and affects the current-voltage characteristic, thereby changing the series and shunt resistances. From the experiment, it was found that the series resistance (Rs) decreases and the shunt resistance (Rsh) increases as the incident light increases.
King Mongkut's University of Technology North Bangkok. Central Library
Address:
BANGKOK
Email:
library@kmutnb.ac.th
Created:
2022
Modified:
2025-08-25
Issued:
2025-08-25
บทความ/Article
application/pdf
BibliograpyCitation :
In Electrical Engineering Academic Association (Thailand) and Rajamangala University of Technology Isan Khon Kaen Campus. Faculty of Engineering. The 2022 International Electrical Engineering Congress (iEECON 2022) (P01936). Khon Kaen : Rajamangala University of Technology Isan, 2022
eng
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