Abstract:
This thesis presents the application of plasma with atmospheric pressure in normal weather condition to stimulate growth and removal of contaminated fungi in mung bean seeds for sprouting. The high voltage was created at 15 kV using flyback converter circuit with a silicon carbide MOSFET switching devices which controlled the voltage driving signal at a frequency of 50 kHz; The voltage level was then released to both electrodes ends at a distance of 1 cm in order to obtain the voltage discharge at the sharp end of the electrode for generating cool plasma.
In the experimental process, the nine sieve containers with a dimension of 9 x 11 x 5 cm (width x length x height) were prepared as containers to plant mung bean sprouts. Then, 100 grams of mung bean seeds were equally added to the containers and soaked in water for 3 hours. Finally, the seed containers were treated with three different experimental models: for Model 1, the seeds were left in a normal cultivation of mung bean sprouts. In Model 2, the seeds were plasma sprayed once per container with the voltage at 5 kV, 10 kV, and 15 kV, respectively, and Model 3 was plasma sprayed twice per container on the first day of planting and the next day with the voltage at 5 kV, 10 kV, and 15 kV, respectively.
The results of studying the growth rate of mung bean sprout in each container in four days showed the following: the condition with the maximum growth rate was plasma sprayed twice with the voltage at 10 kV It was followed by using of plasma spray twice with the voltage at 15 kV Then, the normal cultivation for three containers, plasma sprayed twice with the voltage at 5 kV; and lastly, plasma sprayed once with the voltage at 5-15 kV.