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Prakit Liengpradis. A study on memristor-based Mo/n-Si/Mo Schottky diode with wide electrodes. (). King Mongkut's University of Technology North Bangkok. Central Library. : , 2021.
A study on memristor-based Mo/n-Si/Mo Schottky diode with wide electrodes
Name: Sanya Khunkhao
Organization :
Rajamangala University of Technology Phra Nakhon. Dept. of Elelectronics and Telecommunicaton Engineering
Email :
sanya.k@rmutp.ac.th
Name: Aphichata Thongrak
Organization :
Rajamangala University of Technology Phra Nakhon. Dept. of Elelectronics and Telecommunicaton Engineering
Email :
aphichata.t@rmutp.ac.th
Name: Prakit Liengpradis
Organization :
Sripatum University. Dept. of Electrical and Electronics Application Engineering
Email :
prakit.li@spu.ac.th
keyword:
Metal-semiconductor junctions
LCSH:
Memristors
LCSH:
Diodes, Schottky-barrier
LCSH:
Electronics
-- Materials
Abstract:
This research proposes a semiconductor device with two-terminal electrodes to demonstrate memristive behavior following the fabrication process. A molybdenum (Mo) thin film was deposited onto an n-type silicon wafer with a resistivity of 4050 Ω·cm by E-beam evaporation. The planar MSM Schottky diode has a widely separated electrode structure. The equivalent circuit consists of two diodes and two resistors, and the memristor device is proposed as a 2D2R structure. There is a relationship between magnetic flux and electric charge. Furthermore, in both direct and alternating current tests, decreases and increases in current are observed. In addition to changes in currentvoltage characteristics, the results show typical pinched hysteresis loops of memristive behavior. As described, the currentvoltage characteristics depend on the frequency and the input voltage level, which correspond to the set and reset states. According to the time-domain response, the results represent the nature of the memory state.
King Mongkut's University of Technology North Bangkok. Central Library
Address:
BANGKOK
Email:
library@kmutnb.ac.th
Created:
2021
Modified:
2025-12-17
Issued:
2025-12-17
บทความ/Article
application/pdf
BibliograpyCitation :
In Electrical Engineering Academic Association (Thailand), IEEE Thailand Section, and College of Engineering. Rangsit University. The 2021 9th International Electrical Engineering Congress (iEECON 2021) (P00714). Pathum Thani : Rangsit University, 2021
eng
©copyrights King Mongkut's University of Technology North Bangkok
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ใช้เวลา
0.024902 วินาที
Sanya Khunkhao
| Title | Contributor | Type |
|---|---|---|
| Switching current-voltage of memristor with double barriers Schottky diode
มหาวิทยาลัยเทคโนโลยีพระจอมเกล้าพระนครเหนือ Sanya Khunkhao;Prapaphorn Ployyod;Kasidej Tipamornwiwat | บทความ/Article | |
| A study on memristor-based Mo/n-Si/Mo Schottky diode with wide electrodes
มหาวิทยาลัยเทคโนโลยีพระจอมเกล้าพระนครเหนือ Sanya Khunkhao;Aphichata Thongrak;Prakit Liengpradis | บทความ/Article |
Aphichata Thongrak
| Title | Contributor | Type |
|---|---|---|
| Advanced frequency-domain linear equalisation in SC-FDMA
มหาวิทยาลัยเทคโนโลยีมหานคร Suchada Stijongsataporn;Aphichata Thongrak | บทความ/Article | |
| A study on memristor-based Mo/n-Si/Mo Schottky diode with wide electrodes
มหาวิทยาลัยเทคโนโลยีพระจอมเกล้าพระนครเหนือ Sanya Khunkhao;Aphichata Thongrak;Prakit Liengpradis | บทความ/Article |
Prakit Liengpradis
| Title | Contributor | Type |
|---|---|---|
| A study on memristor-based Mo/n-Si/Mo Schottky diode with wide electrodes
มหาวิทยาลัยเทคโนโลยีพระจอมเกล้าพระนครเหนือ Sanya Khunkhao;Aphichata Thongrak;Prakit Liengpradis | บทความ/Article |