Electrical characterization in heterojunction devices of semiconducting Iron disilicide/silicon and nanocrystalline diamond/silicon

Name: Rawiwan Chaleawpong

LCSH: Nanoparticles

LCSH: Nanocrystals

Abstract: This work introduces two new materials of orthorhombic iron disilicide (ß-FeSi₂) and ultrananocrystalline diamond (UNCD) for near-infrared and ultraviolet (UV) photodiode applications, respectively. To realize the new photodiodes, the significant electrical parameters should be provided. First, the p-silicon (Si)/n ß-FeSi₂ devices were manufactured through per facing-targets sputtering, and their existing interface state and series resistance (Rs) were studied using the interface state density (Nss) and Rs values at various frequencies. Next, the study of existing interface state and Rs for p- UNCD/n-Si devices created by pulsed laser deposition were provided using Nss the and Rs information at different frequencies. After that, the variations of carrier transport processes and device photodetection at different temperatures for p-UNCD/n-Si devices produced through coaxial arc plasma deposition (CAPD) were investigated from the diode parameters and UV detectivity at different temperatures, respectively. Lastly, the predications of equivalent circuit model and relaxation phenomenon of p-UNCD/n- Si devices manufactured via CAPD were carried out based on the impedance information at different voltages

King Mongkut's Institute of Technology Ladkrabang. Central Library

Address: BANGKOK

Email: Lifelong@kmitl.ac.th

Name: Nathaporn Promros

Role: Thesis Advisor

Created: 2021

Modified: 2566-05-25

Issued: 2023-05-25

วิทยานิพนธ์/Thesis

application/pdf

eng

DegreeName: Doctor of philosophy

Descipline: Applied Physics

Grantor: King Mongkut's Institute of Technology Ladkrabang

Level: Doctoral Degree

©copyrights King Mongkut's Institute of Technology Ladkrabang

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