Fabrication and characterization of Al-doped ZnO/Cu2O heterojunction by sparking process for solar cell application

การสร้างและการหาลักษณะเฉพาะของรอยต่อเฮทเทอโรซิงค์ออกไซด์ที่เจือด้วยอะลูมิเนียม/คอปเปอร์ออกไซด์ โดยกระบวนการสปาร์ค สำหรับการประยุกต์เป็นเซลล์แสงอาทิตย์

Name: Anupong Sukee

Classification :.DDC: 621.31

LCSH: Metallic oxides

LCSH: Solar cells

Abstract: Metal oxide exhibits in wide range of functional properties depending on their physical and chemical properties and is used to be a candidate material for many applications such as light emitting diode, solar cell, gas sensor and many electronic devices. Zinc Oxide (ZnO) and Cuprous Oxide (Cu2O) are an interesting semiconductor material because they are earth abundant material, cost effective and non-toxic. In this thesis, we aimed to synthesis Al doped ZnO (AZO) and Cu2O, as well as, to fabricate AZO/Cu2O heterojunction which prepared by a sparking process. AZO films were prepared by double tips sparking process that was done for 5 min under flowing Ar atmosphere with a flow rate of 0.5 L/min at room temperature. The doping ratio of Al to Zn was controlled by sparking energy using a different capacitor (C) paralleled Al doping tips. The capacitances paralleled Zn was fixed at 40 nF while those of Al were varied by 0.5, 1.1, 1.5, 3.1, and 4.7 nF. The as-samples were annealed at 400 ℃ for 60 min. The EDS results showed Al doping ratio in ZnO were 3, 5, 7, 13 and 22 by atomic percent which related to the capacitances paralleled Al tips were 0.5, 1.1, 1.5, 3.1 and 4.7 nF, respectively. The SEM cross-section images indicated that the average thickness of prepared films was 1000 nm. The Raman result of AZO films associated with a typical ZnO. The XRD pattern of AZO films illustrated the lattice planes of (101) and (101) that corresponded to hexagonal structure. AZO films have an average transmittance in visible region at 60 %. The energy gap increased with increasing Al content. The minimum resistivity was found at 5% of Al doping for AZO film and their resistivity was 4,763.61 Ω-cm. Cu2O thin film was prepared by sparking process that was done under flowing Ar atmosphere with a flow rate of 0.5 L/min at room temperature. The samples were annealed at 200 °C. The optimize condition of annealing time was 2 hours. The surface morphologies was pretty porous. The Raman shift corresponded to database of Cu2O. The XRD pattern of Cu2O films illustrated the lattice planes of (111) that corresponded to cubic structure. Cu2O film had absorption band in visible region and their calculated energy gap was 2.1 eV. Moreover, Cu2O film prepared by sparking process have the deposition rate at 18.4976 nm/min. The resistivity of Cu2O film was 810.7873 Ω.cm. AZO/Cu2O Heterojunction was fabricated by two step sparking process that was done under flowing Ar atmosphere with a flow rate of 0.5 L/min at room temperature. The cross-section image demonstrated the film as two layer, AZO was first layer and Cu2O was second layer. The carrier transportation mechanisms at the heterojunction was examined by I-V characteristic under dark. The calculated ideality factor (n) was 2.644. This reveals that the tunneling process is the dominant carrier transportation mechanism at interface of AZO/Cu2O heterojunction.

Chiang Mai University Library

Address: CHIANG MAI

Email: cmulibref@cmu.ac.th

Name: Wiradej Thongsuwan

Role: Chairman

Name: Pisith Singjai

Role: Member

Name: Orawan Wiranwetchayan

Role: Member

Name: Suphaporn Daothong

Role: Member

Created: 2017

Modified: 2020-01-04

Issued: 2020-01-04

วิทยานิพนธ์/Thesis

application/pdf

CallNumber: Th 621.31 A636F

eng

DegreeName: Master of Science

Level: Master's Degree

Descipline: Applied Physics

Grantor: Chiang Mai University

©copyrights Chiang Mai University

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